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Aug. 2, 2022, Congratulations to Le for her paper being accepted by Adv. Func. Mater.

  • pvoptics
  • 2022年8月4日
  • 讀畢需時 1 分鐘

In exploring p-type semiconductor Cu2O as a dopant-free hole-selective contact for crystalline Si solar cells, an ultra-thin H-Al2O3 prepared by atomic layer deposition utilizing H2/N2 mixture as carrier gas is adopted to improve the passivation quality. Finally, the device with a structure of p-Si/H-Al2O3/Cu2O/Pt/Ag dilivers a photoconversion efficiency of 20.35%.



 
 
 

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